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?氮化鎵是一種具有較大禁帶寬度的半導(dǎo)體，屬于所謂寬禁帶半導(dǎo)體之列。它是微波功率晶體管的優(yōu)良材料，也是藍(lán)色光發(fā)光器件中的一種具有重要應(yīng)用值的半導(dǎo)體。

? ?Gallium nitride is a semiconductor with a large band gap, which belongs to the so-called wide band gap semiconductor. It is an excellent material for microwave power transistor and a kind of semiconductor with important application value in blue light emitting devices.

?氮化鎵（GaN）是鎵和氮的化合物，是一種具有寬帶隙和剛性六萬(wàn)晶體 的半導(dǎo)體材料，帶隙是從周?chē)壍乐嗅尫烹娮铀璧哪芰吭雍?，?/span>3.4ev時(shí)，氮化鎵的帶隙是硅的三倍以上。由于帶隙材料可以控制的電場(chǎng)，因此氮化鎵更大的帶隙使得制造耗盡區(qū)非常短或窄的半導(dǎo)體成為可能，從而實(shí)現(xiàn)具有極高載流子密度的器件設(shè)計(jì)，更小的晶體管和更短的電流通道，使速度提高多達(dá)100倍。

?Gallium nitride(GaN),a compound of?gallium and nitrogen ,is a semiconductor material with a broad bandgap and a rigid hexagonal crystal structure.The bandgap is the energy neceessary to liberate electrons from orbits around the nucleus,and at 3.4 eV gallium nitride has a bandgap that is more than three times that of silicon.Because the bandgap controls the electric field that a material can withstand, gallium nitride's greater bandgap enables the fabricatior of semiconductors with very short or narrow depletion zones, resulting in device designs with extremely high carrier densities.Ultra-low resistance and capacitance are achieved with considerably smaller transistors and shorter current channels, enabling speeds up to 100 times quicker.

?GaN技術(shù)可以在標(biāo)準(zhǔn)硅小的得多的外形尺寸下管理巨大的電場(chǎng)，同時(shí)還提供明顯更快的開(kāi)關(guān)。此外，GaN及時(shí)的提高工作溫度高于硅基技術(shù)。GaN爭(zhēng)正變得越來(lái)越重要，因?yàn)樗梢詮V泛的應(yīng)用中明顯提高性能，同時(shí)比傳統(tǒng)的硅技術(shù)消耗更少的能量和占用更少的物理空間。

?The basic line is that GaN technology can manage enormous electric fields in a considerably smaller form factor than standard silicon,while also delivering considerably faster switching. Furthermore, GaN technology has a higher maximum operating temperature than silicon-based technology.GaN is becoming more relevant because it may give dramatically increased performance across a wide range of applications while consuming less energy and taking up less physical space than traditional silicon technology.